dicomvclrar2018 Russia rugby union tour of Italy

The 2018 Russia rugby union tour of Italy was a series of matches played in June 2018 in Italy by the Russia national rugby union team.

Scores and results list Russia’s points tally first.


Category:2018 rugby union tours
Category:Russia national rugby union team tours
Category:2018 in Russian rugby union
Category:2018–19 in European rugby union
Category:History of rugby union1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device with a through-hole.
2. Description of the Related Art
Due to recent demands on high integration, ultra miniaturization, and a high speed, the semiconductor device has become extremely fine and miniaturized. In order to achieve fine and miniaturized semiconductor devices, various technologies have been researched and developed. For example, the downscaling technology has been researched and developed, for example, from the point of view of transferring a pattern to a layer below the uppermost pattern with a photo process.
On the other hand, a technique has been developed in which a plurality of through-holes for interlayer connection and a multilayer interconnection structure are formed in a semiconductor substrate in order to electrically connect layers located at different levels, and the through-holes and semiconductor devices are then formed. FIGS. 1A to 1E are views illustrating a conventional process of forming a multilayer interconnection structure having through-holes.
In a step A of FIG. 1A, a photoresist pattern 100 is formed on an interlayer insulating film 10 on a semiconductor substrate 20. The interlayer insulating film 10 may be, for example, formed of silicon oxide, silicon nitride, or a low-k material. The interlayer insulating film 10 is formed by, for example, a chemical vapor deposition (CVD) method. A nitride film 11, which is an etching-stop film for preventing a semiconductor layer from being etched, may be formed by the CVD method on the interlayer insulating film 10, for example. In addition, the photoresist pattern 100 is used to form an etch mask for etching the nitride film 11 and the interlayer insulating film 10, for example.
In a step B of FIG


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The introduction of the urethral stent has enabled surgeons to treat urethral calculi more successfully. However, in a urethral calculus that shows no response to medical management, the stent may become occluded. This study presents a method to resolve this problem by implanting a stent in the future urethra and inserting urethral stones through the stent into the future urethra. Between 1999 and 2002, 25 male patients, 13 months to 49 years of age, underwent this procedure. The calculi were located in the anterior or posterior urethra. The patients were treated with medical management and stent positioning in the future urethra. Stone disintegration was evident after 4 to 6 weeks. Urethral stenting was performed in the future urethra. There were no postoperative stent obstructions. The average hospitalization was less than 1 day. At the most recent follow-up examination (average, 38 months; range, 15 to 64 months), all patients were continent and showed no signs of disease. Obstructions of stents, when they are located in the future urethra, can be successfully treated with this procedure, which shortens hospitalization, may be carried out with local anesthesia, and has no material or anesthetic risks.first-person-video-footage: “”)
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