The wide band gap direct band gap semiconductors, such as c-Si, GaN and InGaN, are promising for opto-electrical applications owing to their high electron/hole transport. Their high efficiency has opened up an opportunity of using these materials for solid-state lighting sources.
For example, GaN-based visible emitters can potentially replace conventional fluorescent lamps by generating white light with much higher efficacy of light energy to electricity conversion.
A general diode equation 0531ecd6aa
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